Samsung has introduced its next-generation UFS 5.0 storage technology, designed to enhance performance in AI-powered mobile devices.
The new standard delivers sequential read speeds of up to 10.8GB/s and write speeds of up to 9.5GB/s, more than double the performance of Samsung's current UFS 4.1 solution.
According to Samsung, the faster storage will benefit on-device AI tasks, including large language models and generative AI features, by reducing delays and improving responsiveness as AI processing shifts from cloud servers to local devices.
UFS 5.0 is based on the latest JEDEC embedded memory interface specifications, enabling higher bandwidth for moving and processing large datasets quickly.
Samsung also highlights a power efficiency improvement of over 40 percent compared to UFS 4.1, achieved through clock gating and multi-voltage operation technologies.
The storage package measures 7.5mm x 13mm x 0.9mm, which is about 16.7 percent smaller than the previous generation, freeing up internal space for other components in smartphones, XR headsets, and AI-focused wearables.
Mass production of UFS 5.0 is scheduled to begin in the fourth quarter of 2026, with capacities up to 1TB.
Samsung expects the technology to be adopted in next-generation devices as demand for advanced on-device AI capabilities grows.
